InGaN nanowires with high InN molar fraction: growth, structural and optical properties-Reference-Cited by-同舟云学术

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Published:2016-04-04 Issue:19 Volume:27 Page:195704
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Zhang Xin^ORCID,Lourenço-Martins Hugo,Meuret Sophie,Kociak Mathieu,Haas Benedikt,Rouvière Jean-Luc,Jouneau Pierre-Henri^ORCID,Bougerol Catherine,Auzelle T,Jalabert D,Biquard Xavier,Gayral Bruno,Daudin Bruno

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=19/a=195704/pdf

Reference42 articles.

1. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

2. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

3. High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method

4. Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

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