Enhanced charge storage capability of Ge/GeO2core/shell nanostructure
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/19/i=35/a=355206/pdf
Reference24 articles.
1. Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals
2. Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
3. Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing
4. Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si
5. Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates
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3. Influence of strain distribution on the morphology evolution of a Ge/GeO 2 core/shell nanoparticle confined in ultrathin Al 2 O 3 thin film by surface oxidation;Chinese Physics B;2015-02-26
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