Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates-Reference-Cited by-同舟云学术

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Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Published:2006-02-07 Issue:5 Volume:17 Page:1251-1254
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Wu Jiejun,Li Jiemin,Cong Guangwei,Wei Hongyuan,Zhang Panfeng,Hu Weiguo,Liu Xianglin,Zhu Qinsheng,Wang Zhanguo,Jia Quanjie,Guo Liping

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=5/a=015/pdf

Reference18 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

3. Microscopic description of the phase separation process inAlxGayIn1−x−yNquaternary alloys

4. Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys

5. Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary epilayers

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1. Influence of atom segregation on the structure and luminescence of InGaAsSb/AlGaAsSb multiple quantum wells;Journal of Luminescence;2022-09

2. Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes;Fundamental Research;2021-11

3. Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys;Arabian Journal of Chemistry;2019-12

4. Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN;Japanese Journal of Applied Physics;2019-05-14

5. Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials;Journal of Microscopy;2018-11-12

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