Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1728317
Reference32 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Unusual properties of the fundamental band gap of InN
3. Unusual properties of the fundamental band gap of InN
4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
5. Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets
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