High on/off ratio field effect transistors based on exfoliated crystalline SnS2nano-membranes-Reference-Cited by-同舟云学术

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High on/off ratio field effect transistors based on exfoliated crystalline SnS2nano-membranes

Published:2012-12-13 Issue:2 Volume:24 Page:025202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

De Debtanu,Manongdo John,See Sean,Zhang Vincent,Guloy Arnold,Peng Haibing

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=2/a=025202/pdf

Reference29 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. The rise of graphene

5. Energy Band-Gap Engineering of Graphene Nanoribbons

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