Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films-Reference-Cited by-同舟云学术

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Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

Published:2011-05-16 Issue:25 Volume:22 Page:254008
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Shang Da-Shan,Shi Lei,Sun Ji-Rong,Shen Bao-Gen

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=25/a=254008/pdf

Reference29 articles.

1. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

2. Reproducible switching effect in thin oxide films for memory applications

3. Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

4. Reproducible resistance switching in polycrystalline NiO films

5. Identification of a determining parameter for resistive switching of TiO2 thin films

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2. Defects-curated bipolar resistive switching and magnetism in CuxO films;Applied Surface Science;2022-11

3. Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO _3–x Based MIM Device;Advanced Electronic Materials;2022-06-22

4. Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film;Journal of Materials Science: Materials in Electronics;2021-07-12

5. Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis;APL Materials;2021-03-01

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