Role of point defects in hybrid phase TiO2 for resistive random-access memory (RRAM)
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab17b5/pdf
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1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
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