Effects of temperature on the ion-induced bending of germanium and silicon nanowires
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/2053-1591/4/i=7/a=075056/pdf
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1. Epitaxial Post-Implant Recrystallization in Germanium Nanowires
2. Amorphization, recrystallization and end of range defects in germanium
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1. Possibility of the existence of a topological defect in dynamic deformation of the free-standing ultrathin silicon wafer during MeV ion irradiation;Journal of Applied Physics;2022-02-28
2. Anomalous nucleation of crystals within amorphous germanium nanowires during thermal annealing;Nanotechnology;2021-04-26
3. Ion-beam-induced bending of semiconductor nanowires;Nanotechnology;2018-06-08
4. Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid-Phase Epitaxial Growth;Advanced Materials Interfaces;2018-05-15
5. On the fabrication of micro- and nano-sized objects: the role of interstitial clusters;Journal of Materials Science;2018-02-01
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