Possibility of the existence of a topological defect in dynamic deformation of the free-standing ultrathin silicon wafer during MeV ion irradiation
Author:
Affiliation:
1. Department of Nuclear Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8530, Japan
2. Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan
Abstract
Funder
Kansai Atomic Energy Council
Kyoto University Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077180
Reference32 articles.
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4. Positron Annihilation in Semiconductors
5. Ion beam induced transient amorphous nucleation in silicon
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