Design and analysis of energy efficient semi-junctionless n+n+p heterojunction p-channel tunnel field effect transistor
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab07cb/pdf
Reference19 articles.
1. Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET
2. Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
3. A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
4. Tunnel field-effect transistors as energy-efficient electronic switches
5. Numerical Simulation of N+ Source Pocket PIN-GAA-Tunnel FET: Impact of Interface Trap Charges and Temperature
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