Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET-Reference-Cited by-同舟云学术

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Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

Published:2006-04 Issue:4 Volume:50 Page:680-686
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Munteanu Daniela,Autran Jean-Luc,Loussier Xavier,Harrison Samuel,Cerutti Robin,Skotnicki Thomas

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Hisamoto D. Short course IEDM; 2003 and references therein.

2. Frank DJ et al. Monte Carlo simulation of a 30nm dual-gate MOSFET: how short can Si go? In: Proceedings IEDM tech dig; 1992. p. 553.

3. Analytic solutions of charge and capacitance in symmetric and asymmetric Double-Gate MOSFETs;Taur;IEEE Trans Electron Dev,2001

4. Chan M, Man TY, He J, Xi X, Lin CH, Lin X, et al. Quasi-2D compact modeling for Double-Gate MOSFET. In: Proceedings MSM; 2004. p. 108–13.

5. A continuous, analytic Drain-Current model for DG MOSFETs;Taur;IEEE Electron Dev Lett,2004

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