Si 3.5 Sb 2 Te 3 Phase Change Material for Low-Power Phase Change Memory Application-Reference-Cited by-同舟云学术

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Si 3.5 Sb 2 Te 3 Phase Change Material for Low-Power Phase Change Memory Application

Published:2010-10 Issue:10 Volume:27 Page:108101
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Kun Ren,Feng Rao,Zhi-Tang Song,Liang-Cai Wu,Xi-Lin Zhou,Meng-Jiao Xia,Bo Liu,Song-Lin Feng,Wei Xi,Dong-Ning Yao,Bomy Chen

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/27/10/108101/pdf

Reference13 articles.

1. Phase-Change Materials for Electronic Memories

2. Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ti x Sb 2 Te Thin Films for Phase Change Memory Applications;Chinese Physics Letters;2014-07

2. GeTe 4 as a Candidate for Phase Change Memory Application;Chinese Physics Letters;2013-05

3. N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory;Electrochemical and Solid-State Letters;2012

4. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials;Acta Materialia;2012-01

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