GeTe 4 as a Candidate for Phase Change Memory Application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/5/058101/pdf
Reference16 articles.
1. Phase-Change Materials for Electronic Memories
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GeTe-Based Alloy Films Prepared by a Room Temperature Solution Process;Journal of Nanoscience and Nanotechnology;2020-11-01
2. A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge2Sb2Te5 and Ge1Cu2Te3 chalcogenide memory structures;Materials Today Communications;2017-12
3. The Effect of InP Doping on Phase Transformation in GeTe Thin Films;Journal of Nanoscience and Nanotechnology;2016-10-01
4. Role of the van der Waals interactions and impact of the exchange-correlation functional in determining the structure of glassyGeTe4;Physical Review B;2015-10-30
5. Ti x Sb 2 Te Thin Films for Phase Change Memory Applications;Chinese Physics Letters;2014-07
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