Effect of Laser Pulse Width on the Laser Lift-off Process of GaN Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/1/014203/pdf
Reference20 articles.
1. Fabrication and Characterization of InGaN-Based Green Resonant-Cavity LEDs Using Hydrogen Ion-Implantation Techniques
2. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off
3. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
4. Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off
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1. Ultrafast laser lift-off technology for delamination of GaN layers;Advanced Fiber Laser Conference (AFL2023);2024-03-18
2. Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX;2024-03-12
3. 20 µm Micro‐LEDs Mass Transfer via Laser‐Induced In Situ Nanoparticles Resonance Enhancement;Small;2024-02-08
4. The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes;Journal of Applied Physics;2024-01-23
5. Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate;Micromachines;2023-03-29
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