Formation of Co-implanted Silicon Ultra-Shallow Junctions for Low Thermal Budget Applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/1/016101/pdf
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4. Use of Indium and Gallium as P-Type Dopants in Si0.1 µmMOSFETs
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture;Applied Surface Science;2014-09
2. Fabrication and Structural Characterization of Co-implanted Ultra Shallow Junctions for Integration in Piezoresistive Silicon Sensors Compatible with CMOS Processing;IOP Conference Series: Materials Science and Engineering;2013-12-16
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