A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/12/128502/pdf
Reference16 articles.
1. Multiple-gate SOI MOSFETs
2. Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
3. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs
4. A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing
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1. Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET;Silicon;2020-08-13
2. Modeling of a micro-biological sensor field effect for the enzymatic detection of glucose;International Journal of Modern Physics B;2019-10-10
3. Magnetic Field Effect on Threshold Voltage for Ultrathin Silicon Gate-All-Around Nanowire Field-Effect-Transistors;Silicon;2019-02-04
4. Threshold voltage modeling for dual-metal quadruple-gate (DMQG) MOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-11-25
5. Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs;Journal of Computational Electronics;2015-04-02
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