A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/8/088502/pdf
Reference14 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
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4. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction;Japanese Journal of Applied Physics;2016-03-15
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