Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding-Reference-Cited by-同舟云学术

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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

Published:2009-06 Issue:6 Volume:26 Page:064211
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Ting Chen,Tao Hong,Jiao-Qing Pan,Wei-Xi Chen,Yuan-Bing Cheng,Yang Wang,Xiao-Bo Ma,Wei-Li Liu,Ling-Juan Zhao,Guang-Zhao Ran,Wei Wang,Guo-Gang Qin

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/26/6/064211/pdf

Reference27 articles.

1. Silicon Photonics

2. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

3. Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

4. Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III–V/Si Hybrid Laser Array with DBR on Si Waveguide*;Chinese Physics Letters;2019-10-01

2. Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide;Silicon Photonics: From Fundamental Research to Manufacturing;2018-05-21

3. A Wafer-Level Sn-Rich Au—Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sensors;Chinese Physics Letters;2014-05

4. Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection;Silicon Photonics IX;2014-03-08

5. Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method;IEEE Photonics Technology Letters;2013-06

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