III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

Abstract

We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique. The laser array is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings. The lasers have emission peak wavelengths in a range of 1537–1543 nm with a wavelength spacing of about 1.0 nm. The thermal impedances Z T of these hybrid lasers are evidently lower than those DFB counterparts