Single Mode 2 μm GaSb Based Laterally Coupled Distributed Feedback Quantum-Well Laser Diodes with Metal Grating
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/7/074206/pdf
Reference22 articles.
1. GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power
2. MBE grown 2.0μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
3. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
4. Continuous Wave Performance and Tunability of MBE Grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers
5. High-power diode lasers between 1.8μm and 3.0μm for military applications
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