GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/2/028102/pdf
Reference19 articles.
1. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
2. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
3. Noise minimization via deep submicron system-on-chip integration in megapixel CMOS imaging sensors
4. Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates
5. Uncooled InAs∕GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
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1. Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors;Opto-Electronics Review;2024-01-03
2. Short wavelength infrared InPSb/InAs superlattice photodiode grown by metalorganic chemical vapor deposition;Physica Scripta;2022-02-15
3. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy;Nanoscale Research Letters;2018-07-05
4. Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates;Acta Physica Polonica A;2017-08
5. Short-wavelength interband cascade infrared photodetectors operating above room temperature;Journal of Applied Physics;2016-01-14
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