Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates
Author:
Affiliation:
1. Institute of Applied Physics, Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
2. Vigo System S.A., Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors;Opto-Electronics Review;2024-01-03
2. Impact of interfacial thickness on Raman intensity profiles and phonon anisotropy in short-period (AlSb)n/(GaSb)m superlattices;Journal of Vacuum Science & Technology A;2022-07
3. Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties;ACTA PHOTONICA SINICA;2019
4. Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate;Superlattices and Microstructures;2018-08
5. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy;Nanoscale Research Letters;2018-07-05
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