Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168668
Reference10 articles.
1. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
2. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
3. W-structured type-II superlattice-based long- and very long wavelength infrared photodiodes
4. Proposal for strained type II superlattice infrared detectors
5. Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices
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2. Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook;Journal of Physics D: Applied Physics;2023-07-27
3. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15
4. Antimony segregation in an InAs/InAs1−xSbx superlattice grown by metalorganic chemical vapor deposition;Journal of Applied Physics;2021-09-07
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