A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/9/097301/pdf
Reference30 articles.
1. Room Temperature Visible Photoluminescence from Thermally Annealed Hydrogenated Amorphous Silicon Films
2. Driving Schemes for a-Si and LTPS AMOLED Displays
3. A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors
4. Low-temperature characteristics of a-Si:H thin-film transistor under mechanical strain
5. Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors
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1. Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs;Chinese Physics Letters;2018-02
2. Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions;Solid-State Electronics;2017-03
3. A new drain current model for amorphous IGZO thin film transistors;The European Physical Journal Applied Physics;2015-04
4. A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor;Acta Physica Sinica;2015
5. Analysis of temperature effect on a-Si:H thin film transistors;Solid-State Electronics;2013-03
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