Analysis of temperature effect on a-Si:H thin film transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Capacitance–voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs
2. High-Temperature Stability and Enhanced Performance of a-Si:H TFT on Flexible Substrate Due to Improved Interface Quality
3. Possin GE. Amorphous silicon technology – 1991 Symposium 1991;327–32.
4. Driving Schemes for a-Si and LTPS AMOLED Displays
5. Phonon driven transport in amorphous semiconductors: transition probabilities
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors;Journal of Display Technology;2015-04
2. A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor;Acta Physica Sinica;2015
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