Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/9/096101/pdf
Reference18 articles.
1. Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions
2. Influence of Width of Left Well on Intersubband Transitions in Al x Ga 1−x N/GaN Double Quantum Wells
3. Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells
4. Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures
5. Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplet elimination by thermal annealing technique
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer;Journal of Electronic Materials;2021-02-12
2. Accurate measurement and influence on device reliability of defect density of a light-emitting diode;Chinese Physics B;2013-10
3. Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition;Nanoscale Research Letters;2012-11-26
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