Accurate measurement and influence on device reliability of defect density of a light-emitting diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/10/106108/pdf
Reference19 articles.
1. A Review on the Reliability of GaN-Based LEDs
2. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
3. Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method
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1. The degradation mechanism of GaN HP-LED under accelerated aging was analyzed by illuminance and temperature distribution;Molecular Crystals and Liquid Crystals;2017-07-03
2. Aging mathematical model of InGaN/GaN LEDs based on non-radiative recombination;AIP Conference Proceedings;2017
3. Research on the life prediction of light-emitting diode based on neural network;AIP Conference Proceedings;2017
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