Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
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1. Effects of GaN cap layer thickness on an AlN/GaN heterostructure;Chinese Physics B;2014-11-28
2. Intersubband transitions in In x Al (1 − x ) N/In y Ga (1 − y ) N quantum well operating at 1.55 μm;Chinese Physics B;2014-09
3. Asymmetric effects on the optical properties of double-quantum well systems;Optical Engineering;2014-02-28
4. Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes;Chinese Physics B;2014-02
5. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes;Chinese Physics B;2014-02
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