Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/3/038502/pdf
Reference13 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
4. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
5. Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
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1. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors;Journal of Semiconductors;2023-09-01
2. Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots;Journal of Materials Science & Technology;2023-04
3. Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO transistors and exploration in digital circuits;Journal of Materials Science & Technology;2021-10
4. Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs;Materials Research Express;2019-09-13
5. Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors;Chinese Physics B;2018-06
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