Extrinsic Base Surface Passivation in High Speed “Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/5/058502/pdf
Reference10 articles.
1. 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/
2. Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz
3. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz
4. High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with f t = 170 GHz and f max = 253 GHz
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical gain enhancement and wavefunction confinement tuning in AlSb/InGaAsP/GaAsSb heterostructures;The European Physical Journal B;2021-06
2. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology;Chinese Physics B;2016-05
3. Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstratingFT/Fmaxof 350/532 GHz;Microwave and Optical Technology Letters;2015-09-26
4. The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor;Acta Physica Sinica;2013
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