Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstratingFT/Fmaxof 350/532 GHz

Author:

Niu Bin12,Wang Yuan1,Cheng Wei1,Xie Zi-Li2,Lu Hai-Yan1,Sun Yan1,Xie Jun-Ling1,Chen Tang-Sheng1

Affiliation:

1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory; Nanjing Electronic Devices Institute; Nanjing 210016 China

2. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics; Nanjing University; Nanjing 210093 China

Funder

Special Funds for Major State Basic Research Project

The Nature Science Foundation of Jiangsu province

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. L.V. Titova A.K. Ayesheshim A. Golubov 2015

2. K.B. Cooper R.J. Dengler N. Llombart 2009 1297 1307

3. J. Hacker M. Seo A.C. Young 2010

4. M. Urteaga R. Pierson P. Rowell 2011 281 282

5. M. Nagatani H. Nosaka K. Sano 2011

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1. A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique;Infrared Physics & Technology;2024-03

2. Accurate on Wafer Calibration and S-parameter Measurement Setup for InP-based HEMT Devices to 220 GHz;Progress In Electromagnetics Research M;2024

3. Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz;IEEE Transactions on Electron Devices;2020-12

4. Machine learning technique based extremely broadband small‐signal behavioral model for InP DHBTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-04-04

5. InGaAs / InP DHBT small‐signal model up to 325 GHz with two intrinsic base resistances;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-01-21

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