A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/5/058401/pdf
Reference18 articles.
1. A method of designing photonic crystal grating slow-wave circuit for Ribbon–Beam microwave travelling wave amplifiers
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1. A terahertz on-chip InP-based power combiner designed using coupled-grounded coplanar waveguide lines*;Chinese Physics B;2021-12-01
2. 180 to 240 GHz broadband, EM‐based power amplifier using 0.5‐μm InP DHBT technology;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-03-08
3. A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner;IEEE Microwave and Wireless Components Letters;2019-03
4. Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-02-19
5. InGaAs / InP DHBT small‐signal model up to 325 GHz with two intrinsic base resistances;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-01-21
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