Damage Removal and Strain Relaxation in As + -Implanted Si 0.57 Ge 0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/14/3/014/pdf
Reference17 articles.
1. Advantage of rapid thermal annealing over furnace annealing for P‐implanted metastable Si/Ge0.12Si0.88
2. Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing
3. Rapid thermal annealing of arsenic‐implanted Si0.6Ge0.4 alloys: Temperature effects
4. Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation
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1. Dependence of surface nano-structural modifications of Ti implanted by N+ ions on temperature;Applied Surface Science;2010-05
2. Influence of N+ ion implantation on the corrosion and nano-structure of Ti samples;Corrosion Science;2010-04
3. Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition;Chinese Physics Letters;1999-10-01
4. Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation;Chinese Physics Letters;1999-10-01
5. Modification of TiN Coatings by N + and C + Implantation with High Ion Flux;Chinese Physics Letters;1999-03-01
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