Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/12/124204/pdf
Reference18 articles.
1. Device characteristics of long-wavelength lasers based on self-organized quantum dots
2. High-speed characteristics of tunnelling injection and excited-state emitting InAs/GaAs quantum dot lasers
3. Direct modulation of excited state quantum dot lasers
4. Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser
5. O-band excited state quantum dot bilayer lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance;Crystals;2020-10-29
2. Multimode optical feedback dynamics in InAs/GaAs quantum dot lasers emitting exclusively on ground or excited states: transition from short- to long-delay regimes;Optics Express;2018-01-16
3. Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method;Chinese Physics B;2017-06
4. Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states;AIP Advances;2016-12
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