O-band excited state quantum dot bilayer lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3605590
Reference22 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots
3. High-speed quantum dot lasers
4. Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth
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