Electrical Properties of the ZnO/Si Heterostructure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. The measurement of the trace Li content and distribution in ZnO films and the thickness of these films
2. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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4. Optically pumped lasing of ZnO at room temperature
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1. ZnO/SiC/Porous-Si/Si Heterostructure: Obtaining and Properties;Nanosistemi, Nanomateriali, Nanotehnologii;2022-09
2. Synthesis and defect structure of quasi-one-dimensional composite material ZnO/ZnS;Doklady Chemistry;2017-05
3. Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol–gel method;Journal of Alloys and Compounds;2012-04
4. Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction;Journal of Semiconductors;2010-12
5. Grain boundary layer behavior in ZnO/Si heterostructure;Journal of Semiconductors;2010-03
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