Structure Stability of LaAlO 3 Thin Films on Si Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/9/058/pdf
Reference17 articles.
1. Thermal expansion of LaAlO3 and (La,Sr)(Al,Ta)O3, substrate materials for superconducting thin-film device applications
2. Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures
3. Crystalline Quality and Electrical Properties ofPbZrxTi1-xO3Thin Films Prepared onSrTiO3-Covered Si Substrates
4. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
5. YBa2Cu3O7-x/SrTiO3//LaAlO3 heterostructures obtained by injection MOCVD
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The influence of La/Al atomic ratio on the dielectric constant and band-gap of stack-gate La–Al–O/SiO2 structure;Journal of Materials Science: Materials in Electronics;2016-11-10
2. First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations;The Journal of Physical Chemistry C;2015-04-15
3. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates;Applied Physics Letters;2014-02-24
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