Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/11/116801/pdf
Reference15 articles.
1. Integrating silicon photonics
2. Silicon Photonics
3. Nanolasers grown on silicon
4. Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
5. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
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1. Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity;Chinese Physics B;2015-09-29
2. Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition;Chinese Physics Letters;2015-08
3. Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon;Journal of Lightwave Technology;2015-08-01
4. Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition;Chinese Physics B;2015-02
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