Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference23 articles.
1. Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells
2. Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual- and triple-junction solar cells
3. III–V compound multi-junction solar cells: present and future
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1. Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD;Journal of Materials Science: Materials in Electronics;2021-02-06
2. Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE;Journal of Crystal Growth;2015-03
3. Two crucial factors influencing quality of GaAs on Ge substrate;Chinese Physics B;2014-04
4. Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition;Chinese Physics Letters;2013-11
5. Dynamic scaling and optical properties of Zn(S, O, OH) thin film grown by chemical bath deposition;Chinese Physics B;2011-11
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