Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

Published:2009-01 Issue:1 Volume:26 Page:014214
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Hai-Li Wang,Dong-Hai Wu,Bing-peng Wu,Hqiao-Qiao Ni,She-Song Huang,Yong-Hua Xiong,Peng-Fei Wang,Qin Han,Zhi-Chuan Niu,Tångring I,Wang S. M

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/26/1/014214/pdf

Reference15 articles.

1. GaAs-based long-wavelength lasers

2. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

3. p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

4. 1.32-μm GaInNAs-GaAs laser with a low threshold current density

5. High structural and optical quality 1.3μm GaInNAs∕GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition;Chinese Physics Letters;2013-11

2. InP-based InxGa1−xAs metamorphic buffers with different mismatch grading rates;Journal of Semiconductors;2013-07

3. Metamorphic QuantumWell Lasers;Lattice Engineering;2012-11-27

4. Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy;Journal of Applied Physics;2010-05-15

5. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs;Chinese Physics Letters;2010-03

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