Surface Disorder of GaN Irradiated by Highly Charged Ar 2+ -Ions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/3/036101/pdf
Reference18 articles.
1. Strong surface disorder and loss of N produced by ion bombardment of GaN
2. Irradiation-induced recovery of disorder in gallium nitride
3. Ion implantation into GaN
4. Three-step amorphisation process in ion-implanted GaN at 15 K
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2. Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 °C;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-09
3. Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe20+ ions at room temperature;Applied Surface Science;2019-08
4. Slow ions 84Kr15+, 17+ bombardment on GaAs;Acta Physica Sinica;2014
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