Strong surface disorder and loss of N produced by ion bombardment of GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126814
Reference9 articles.
1. Damage to epitaxial GaN layers by silicon implantation
2. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
3. Ion implantation of epitaxial GaN films: damage, doping and activation
4. Doping of GaN by Ion Implantation: Does it Work?
5. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
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