Properties of Al y Ga 1– y N/Al x Ga 1– x N/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/1/017301/pdf
Reference17 articles.
1. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
2. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
3. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
4. 30-W/mm GaN HEMTs by Field Plate Optimization
5. Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer;Solid State Communications;2013-05
2. Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics;Chinese Physics Letters;2011-01
3. Development and Characterization of Metal-Insulator-Metal Capacitors with SiN x Thin Films by Plasma-Enhanced Chemical Vapor Deposition;Chinese Physics Letters;2010-07
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