A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference37 articles.
1. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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1. Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering;Journal of Applied Physics;2024-05-01
2. Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs;International Journal of Integrated Engineering;2021-07-31
3. A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures;Journal of Electronic Materials;2017-05-04
4. Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer;Physica E: Low-dimensional Systems and Nanostructures;2016-05
5. Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers;Thin Solid Films;2015-09
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