Dynamics of Below-Band-Gap Carrier in Highly Excited GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs
2. Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs
3. Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch
4. Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN
5. Stimulated Emission and Excitonic Bleaching in GaN Epilayers under High-Density Excitation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112̄0) sapphire grown by rf-molecular beam epitaxy;RSC Advances;2015
2. Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions;Acta Physica Sinica;2008
3. Preparation and Properties of GaN Films on GaAs Substrates;Chinese Physics Letters;2004-05
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