Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/8/088506/pdf
Reference17 articles.
1. Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
2. Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor
3. Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors
4. Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-O thin-film transistors using gated-four-probe measurements
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1. Non-adiabatic quantum dynamical studies of Na ( 3 p ) + HD ( ν = 1 , j = 0 ) → NaH / NaD + D / H reaction*;Chinese Physics B;2019-06-01
2. Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors;Modern Physics Letters B;2019-01-20
3. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K;Chinese Physics Letters;2018-09
4. Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors;Chinese Physics B;2018-06
5. Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator;Chinese Physics Letters;2018-04
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