Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/9/098502/pdf
Reference26 articles.
1. Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5
2. Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
3. X-Ray Detector-on-Plastic With High Sensitivity Using Low Cost, Solution-Processed Organic Photodiodes
4. Radiation-Hard ZnO Thin Film Transistors
5. Total Dose Ionizing Radiation Effects in the Indium–Zinc Oxide Thin-Film Transistors
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1. Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K;Applied Physics Letters;2024-04-22
2. Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact;Key Engineering Materials;2023-05-31
3. Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs;Solid-State Electronics;2021-08
4. Temperature-Dependent Low-Frequency Noise in Indium–Zinc–Oxide Thin-Film Transistors Down to 10 K;IEEE Transactions on Electron Devices;2019-05
5. Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors;Modern Physics Letters B;2019-01-20
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