Effect of Oxygen Vacancy on the Band Gap and Nanosecond Laser-Induced Damage Threshold of Ta 2 O 5 Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/8/084207/pdf
Reference22 articles.
1. Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors
2. High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films
3. Laser Damage Mechanisms of Amorphous Ta 2 O 5 Films at 1064, 532 and 355 nm in One-on-One Regime
4. Influence of Different Substrates on Laser Induced Damage Thresholds at 1064 nm of Ta 2 O 5 Films
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1. Study on microstructure, optical and tribological properties of self-formed Ta oxide films;Vacuum;2023-12
2. Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics;Scientific Reports;2023-10-03
3. Effect of Nitrogen Flow Rate on Microstructure and Optical Properties of Ta2O5 Coatings;Coatings;2022-11-14
4. Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM;Applied Surface Science;2021-09
5. Annealing effects on the optical and electrochemical properties of tantalum pentoxide films;Journal of Advanced Ceramics;2021-03-21
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