Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/29/8/087701/pdf
Reference20 articles.
1. PAC study in the HfO2–SiO2 system
2. Band offsets of Er2O3 films epitaxially grown on Si substrates
3. Interfacial reactions between thin rare-earth-metal oxide films and Si substrates
4. Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy
5. Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates
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1. Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor;International Journal of Energy Research;2024-02-16
2. Reinforced near-infrared compatible absorption performance of Er4Al2O9 based on Sm3+/Dy3+ co-doping;Journal of Materials Science: Materials in Electronics;2023-03
3. In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy;Superlattices and Microstructures;2017-04
4. Band Alignment and Band Gap Characterization of La 2 O 3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering;Chinese Physics Letters;2014-02
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