Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/2/027703/pdf
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition
3. Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide
4. Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
5. Chemical Structure of HfO 2 /Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy
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